Title:
処理チャンバにガスを供給するための方法及び装置
Document Type and Number:
Japanese Patent JP2005533179
Kind Code:
A
Abstract:
Embodiments described herein are directed to an apparatus for generating a precursor for a semiconductor processing system. In one embodiment, an apparatus for generating a precursor gas during a vapor deposition process is described. The apparatus includes a canister containing an interior volume between a lid and a bottom, a gaseous inlet and a gaseous outlet disposed on the lid, a plurality of silos coupled to the bottom and extending from a lower region to an upper region of the interior volume, and a tantalum precursor having a chlorine concentration of about 5 ppm or less contained within the lower region of the canister.
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Inventors:
Ganguri, Seri
Chen, Lin
Ku, Vincent, W.
Chen, Lin
Ku, Vincent, W.
Application Number:
JP2004521890A
Publication Date:
November 04, 2005
Filing Date:
July 16, 2003
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C16/18; C23C16/34; C23C16/44; C23C16/448; C23C16/455; H01L21/31; (IPC1-7): C23C16/448; H01L21/31
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Yuichi Yamada