Title:
低減された界面粗さ(界面ラフネス)を有するニッケルシリサイド
Document Type and Number:
Japanese Patent JP2005539402
Kind Code:
A
Abstract:
Nickel silicide formation with significantly reduced interface roughness is achieved by forming a diffusion modulating layer between the underlying silicon and nickel silicide layers. Embodiments include ion implanting nitrogen into the substrate and gate electrode, depositing a thin layer of titanium or tantalum, depositing a layer of nickel, and then heating to form a diffusion modulating layer containing nitrogen at the interface between the underlying silicon and nickel silicide layers.
Inventors:
Eric N. Payton
Paul Earl. Bethel
Simon S. Chan
Fred N. Horse
Paul Earl. Bethel
Simon S. Chan
Fred N. Horse
Application Number:
JP2004548264A
Publication Date:
December 22, 2005
Filing Date:
May 13, 2003
Export Citation:
Assignee:
ADVANCED MICRO DEVICES INCORPORATED
International Classes:
H01L21/28; H01L21/00; H01L21/265; H01L21/285; H01L21/336; H01L21/44; H01L23/48; H01L23/52; H01L29/40; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; H01L21/265; H01L21/28; H01L29/78; H01L29/786
Attorney, Agent or Firm:
Masatake Suzuki
Ryota Sano
Yoshito Muramatsu
Ryota Sano
Yoshito Muramatsu