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Title:
リソグラフィマスクおよび半導体ウェーハ内の位相欠陥を検出する方法およびシステム
Document Type and Number:
Japanese Patent JP2006500638
Kind Code:
A
Abstract:
Provided are apparatus and methods for detecting phase defects. The invention relies generally on the distortion of light as it passes through defects in phase shift masks to detect these defects. Light traveling through a defect, such as a bump in an etched area will travel at a different angle than light traveling through air. In order to enhance the signals generated from the defects, the invention in several embodiments provides a multiple element detector having at least four elements, arranged in a radially symmetric configuration. Individual elements of the detector are selected to form a differential signal based on the configuration of pattern lines in the area proximate to the defect. The resulting differential signal is used to generate an image signal and to identify phase defects.

Inventors:
Stokovsky Stanley
Kvamme Demon F.
Lee Chun Shen
Pettybone don
Application Number:
JP2004568956A
Publication Date:
January 05, 2006
Filing Date:
September 19, 2003
Export Citation:
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Assignee:
KLA-Tenker Technology Corporation
International Classes:
G01N21/896; G01N21/956; G03F1/00; H01L21/027
Domestic Patent References:
JPH05312549A1993-11-22
JPH09230247A1997-09-05
JP2001005167A2001-01-12
JPH07159336A1995-06-23
JPH05312549A1993-11-22
JPH09230247A1997-09-05
JP2001005167A2001-01-12
JPH07159336A1995-06-23
Attorney, Agent or Firm:
Meisei International Patent Office