Title:
ウェハ上のフォトレジストを減衰位相シフトマスクを使用してパターニングする方法
Document Type and Number:
Japanese Patent JP2006519420
Kind Code:
A
Abstract:
An attenuated phase shift mask (10 or 20) includes a substrate (12 or 22) and an attenuation stack (11 or 21) overlying the substrate. The attenuation stack includes a chromium layer or ruthenium layer (14 or 24) overlying the substrate, a tantalum silicon oxide layer (16 or 26) overlying the chromium layer or the ruthenium layer, and a tantalum silicon nitride layer (18 or 28) overlying the tantalum silicon oxide layer. The attenuation stack may also include a layer (30) between the substrate (22) and the chromium or ruthenium layer (24). In one embodiment, this layer is a portion of the substrate. The attenuation stack is used to pattern photoresist (50) on a semiconductor wafer. In one embodiment, portions of the substrate adjacent the attenuation stack has a transmission of greater than 90 percent and the attenuation stack has a transmission of 5 to 20 percent at the exposure wavelength. In one embodiment, an inspection contrast between the substrate and the attenuation stack at an inspection wavelength is greater than 75 percent.
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Inventors:
Wasson, James Earl.
Mangato, Pawitter
Mangato, Pawitter
Application Number:
JP2006508739A
Publication Date:
August 24, 2006
Filing Date:
February 13, 2004
Export Citation:
Assignee:
Freescale Semiconductor, Inc.
International Classes:
G03C5/00; G03F1/32; G03F7/20; G03F9/00; G03G16/00; G21K5/00; H01L21/027; G03F1/00; H01L
Domestic Patent References:
| JP2002072454A | 2002-03-12 | |||
| JP2001337436A | 2001-12-07 | |||
| JP2001147516A | 2001-05-29 | |||
| JP2003005347A | 2003-01-08 |
Attorney, Agent or Firm:
Mamoru Kuwagaki