Title:
水素化シリコンオキシカーバイド膜の生成方法。
Document Type and Number:
Japanese Patent JP2006519496
Kind Code:
A
Abstract:
A method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises using plasma-assisted polymerization to react a cyclic silane compound containing at least one strained silicon bond to produce the films. The resulting films are useful in the formation of semiconductor devices.
Inventors:
Roboda, Mark John
Fan Byung Kun
Fan Byung Kun
Application Number:
JP2006503062A
Publication Date:
August 24, 2006
Filing Date:
January 26, 2004
Export Citation:
Assignee:
DOW CORNING CORPORATION
International Classes:
H01L21/312; C23C16/30; C23C16/42; H01L21/316
Domestic Patent References:
| JPH08298260A | 1996-11-12 | |||
| JP2000049157A | 2000-02-18 | |||
| JP2003007699A | 2003-01-10 | |||
| JPH07165497A | 1995-06-27 | |||
| JP2004526318A | 2004-08-26 |
Foreign References:
| WO2002077320A1 | 2002-10-03 |
Attorney, Agent or Firm:
Michiteru Soga
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Kazuhiro Oyaku
Michiharu Soga
Hidetoshi Furukawa
Suzuki Kenchi
Kajinami order
Kazuhiro Oyaku