Title:
逐次的横方向結晶化技術を用いて結晶化させた複数の半導体薄膜フィルムを処理するシステム及びプロセス
Document Type and Number:
Japanese Patent JP2006519498
Kind Code:
A
Abstract:
A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such section(s) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such section(s) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.
Inventors:
James S Im
Application Number:
JP2006503713A
Publication Date:
August 24, 2006
Filing Date:
February 18, 2004
Export Citation:
Assignee:
The Trustees of Columbia University in the City of New York
International Classes:
H01L21/268; B23K26/067; B23K26/12; H01L21/20
Domestic Patent References:
| JP2002353159A | 2002-12-06 | |||
| JPH09171971A | 1997-06-30 | |||
| JP2004520715A | 2004-07-08 | |||
| JP2000223425A | 2000-08-11 | |||
| JP2000346618A | 2000-12-15 |
Foreign References:
| WO2001073769A1 | 2001-10-04 |
Attorney, Agent or Firm:
Kosaku Sugimura
Kazuaki Takami
Hiroshi Tokunaga
Yoshiyuki Iwasa
Shiro Fujitani
Kiyoshi Kuruma
Kazuyuki Tomita
Kazuaki Takami
Hiroshi Tokunaga
Yoshiyuki Iwasa
Shiro Fujitani
Kiyoshi Kuruma
Kazuyuki Tomita