Title:
共振器を備える半導体装置
Document Type and Number:
Japanese Patent JP2007511945
Kind Code:
A
Abstract:
The present invention relates to a method of manufacturing a resonator within a semiconductor device, said semiconductor device comprising a substrate, wherein said method comprises the steps of: etching a hole in the substrate, creating a first doping zone (Z-DIFF1) for defining a first electrode, partitioning said first electrode into two electrodes, applying a delimited oxide deposit inside and around the hole, defining a second doping zone (Z-DIFF2) totally covering the hole, removing the oxide deposit in order to define an element forming the resonator able to vibrate between the two electrodes.
Inventors:
Gamand Patrice
Application Number:
JP2006538980A
Publication Date:
May 10, 2007
Filing Date:
November 01, 2004
Export Citation:
Assignee:
Koninklijke Philips Electronics N.V.
International Classes:
H03H3/007; B81C1/00
Domestic Patent References:
| JPS62232171A | 1987-10-12 | |||
| JPS62232171A | 1987-10-12 | |||
| JPH08510094A | 1996-10-22 |
Foreign References:
| US20020145489A1 | 2002-10-10 | |||
| US20020145489A1 | 2002-10-10 |
Attorney, Agent or Firm:
Susumu Tsugaru
Akihiko Miyazaki
Fueda Shusen
Akihiko Miyazaki
Fueda Shusen