Title:
集積トランジスタ、特に40ボルト以上の電圧用集積トランジスタ、およびその製造方法
Document Type and Number:
Japanese Patent JP2007522650
Kind Code:
A
Abstract:
Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties.
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Inventors:
Mueller, Karl Heinz
Reschlau, Claus
Reschlau, Claus
Application Number:
JP2006548189A
Publication Date:
August 09, 2007
Filing Date:
November 26, 2004
Export Citation:
Assignee:
Infineon Technologies AG
International Classes:
H01L21/331; H01L21/225; H01L21/762; H01L21/822; H01L27/04; H01L27/06; H01L29/06; H01L29/732; H01L29/78
Domestic Patent References:
| JPH11214398A | 1999-08-06 | |||
| JPH0778833A | 1995-03-20 |
Foreign References:
| US6011297A | 2000-01-04 | |||
| US20010015470A1 | 2001-08-23 |
Attorney, Agent or Firm:
Kenzo Hara International Patent Office