Title:
高度に選択的な酸化ケイ素エッチング組成物
Document Type and Number:
Japanese Patent JP2007532006
Kind Code:
A
Abstract:
Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.
Inventors:
John Farr, McFarland
Siewerth, Wolfgang
Dodd, Michael A
Siewerth, Wolfgang
Dodd, Michael A
Application Number:
JP2007506575A
Publication Date:
November 08, 2007
Filing Date:
March 31, 2005
Export Citation:
Assignee:
Honeywell International Inc.
International Classes:
H01L21/308; C09K13/08; C11D7/08; C11D7/10; C11D7/26; C11D11/00; H01L21/311; H01L21/3205; H01L21/768; H01L23/52; H01L23/522
Domestic Patent References:
| JPH02216126A | 1990-08-29 | |||
| JPH1036140A | 1998-02-10 | |||
| JPH02216126A | 1990-08-29 | |||
| JPH1036140A | 1998-02-10 |
Attorney, Agent or Firm:
Kazuo Shamoto
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Koji Hirayama
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Koji Hirayama