Title:
誘電体上にIII-V族半導体材料を成長させるための方法
Document Type and Number:
Japanese Patent JP2007533169
Kind Code:
A
Abstract:
Formation of a regrowth layer of a Group III-V semiconductor material is facilitated by prior formation of an intermediate layer, selected primarily for its smooth morphology properties. The intermediate layer is formed over an underlying substrate and over a dielectric layer formed over portions of the substrate. The intermediate layer maintains the monocrystalline properties of the underlying substrate in regions other than those covered by the dielectric layer, and improves the electrical and morphology properties of the regrowth layer formed over the intermediate layer.
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Inventors:
Gambin, Vincent
Sawdai, Donald Jay.
Sawdai, Donald Jay.
Application Number:
JP2007509481A
Publication Date:
November 15, 2007
Filing Date:
March 23, 2005
Export Citation:
Assignee:
Northrop Grumman Corporation
International Classes:
H01L21/203; C30B29/40; H01L21/20
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita