Title:
エンハンスメント型III族窒化物デバイス
Document Type and Number:
Japanese Patent JP2007534163
Kind Code:
A
Abstract:
A III-nitride switch includes a recessed gate contact to produce a nominally off, or an enhancement mode, device. By providing a recessed gate contact, a conduction channel formed at the interface of two III-nitride materials is interrupted when the gate electrode is inactive to prevent current flow in the device. The gate electrode can be a schottky contact or an insulated metal contact. Two gate electrodes can be provided to form a bi-directional switch with nominally off characteristics. The recesses formed with the gate electrode can have sloped sides. The gate electrodes can be formed in a number of geometries in conjunction with current carrying electrodes of the device.
Inventors:
Robert beach
Application Number:
JP2006551390A
Publication Date:
November 22, 2007
Filing Date:
January 24, 2005
Export Citation:
Assignee:
INTERNATIONAL RECTIFIER CORPORATION
International Classes:
H01L21/338; H01L21/335; H01L29/778; H01L29/78; H01L29/812; H01L29/20
Domestic Patent References:
| JP2000277724A | 2000-10-06 | |||
| JP2000195871A | 2000-07-14 | |||
| JP2002016087A | 2002-01-18 | |||
| JPH0194676A | 1989-04-13 | |||
| JPH10223901A | 1998-08-21 | |||
| JPH03196532A | 1991-08-28 |
Foreign References:
| WO2003071607A1 | 2003-08-28 |
Attorney, Agent or Firm:
Yoshikazu Tani
Kazuo Abe
Kazuo Abe