Title:
低κ誘電体付与のためのシロキサンエポキシポリマー
Document Type and Number:
Japanese Patent JP2007535177
Kind Code:
A
Abstract:
Semiconductor devices employing siloxane epoxy polymers as low-kappa dielectric films are disclosed. The devices include a semiconductor substrate, one or more metal layers or structures and one or more dielectric films, wherein at least one dielectric film in the devices is a siloxane epoxy polymer. Use of siloxane epoxy polymers is advantageous, in part, because the polymers adhere well to metals and have dielectric constants as low as 1.8. Thus, the disclosed semiconductor devices offer much better performance than devices fabricated using conventional dielectric materials. Furthermore, the siloxane epoxy polymer dielectrics are fully curable at low temperatures, exhibit low leakage currents, and remain stable at temperatures greater than 400° C. making them particularly attractive for use in the semiconductor industry
Inventors:
GHOSHAL Ramkrishna
WANG Pei-I
LU Toh-Ming
MURARKA Shyam P.
WANG Pei-I
LU Toh-Ming
MURARKA Shyam P.
Application Number:
JP2007510854A
Publication Date:
November 29, 2007
Filing Date:
April 25, 2005
Export Citation:
Assignee:
Polyset Company, Inc.
RENSSELAER POLYTECHNIC INSTITUTE
RENSSELAER POLYTECHNIC INSTITUTE
International Classes:
H01L21/312; C08G59/20; C08G77/04; C09D183/06; H01L21/768; H01L23/522; H01L23/532; H01L23/58
Domestic Patent References:
| JP2003520879A | 2003-07-08 |
Foreign References:
| WO2004034104A1 | 2004-04-22 |
Attorney, Agent or Firm:
Kenichi Morita
Kenjiro Yamaguchi
Kenjiro Yamaguchi