Title:
低k材料上にTaN拡散バリア領域を堆積する方法(低k材料上のTaN拡散バリア領域のPE-ALD)
Document Type and Number:
Japanese Patent JP2008502147
Kind Code:
A
Abstract:
Methods of depositing a tantalum-nitride (TaN) diffusion barrier region on low-k materials. The methods include forming a protective layer on the low-k material substrate by performing plasma-enhanced atomic layer deposition (PE-ALD) from tantalum-based precursor and a nitrogen plasma in a chamber. The protective layer has a nitrogen content greater than its tantalum content. A substantially stoichiometric tantalum-nitride layer is then formed by performing PE-ALD from the tantalum-based precursor and a plasma including hydrogen and nitrogen. The invention also includes the tantalum-nitride diffusion barrier region so formed. In one embodiment, the metal precursor includes tantalum penta-chloride (TaCl5). The invention generates a sharp interface between low-k materials and liner materials.
Inventors:
Dan, Delen, N
Kim, Hyunjun
Rosnagar, Stephen, M
Theo, Sun-Cheon
Kim, Hyunjun
Rosnagar, Stephen, M
Theo, Sun-Cheon
Application Number:
JP2007515460A
Publication Date:
January 24, 2008
Filing Date:
May 31, 2005
Export Citation:
Assignee:
INTERNATIONAL BUSINESS MASCHINES CORPORATION
International Classes:
H01L21/3205; C23C16/14; C23C16/34; C23C16/455; H01L21/285; H01L21/4763; H01L21/768; H01L23/52; H01L23/532
Attorney, Agent or Firm:
Takeshi Ueno
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi
Tasaichi Tanae
Yoshihiro City
Hiroshi Sakaguchi