Title:
時分割多重化エッチング処理時にアスペクト比に依存するエッチングを低減する方法と装置
Document Type and Number:
Japanese Patent JP2008504975
Kind Code:
A
Abstract:
The present invention provides a method and an apparatus for reducing aspect ratio dependent etching that is observed when plasma etching deep trenches in a semiconductor substrate through an alternating deposition/etch process. A plurality of different sized features on the substrate are monitored in real time during the alternating deposition/etch process. Then, based on the information received from the monitor, at least one process parameter is adjusted in the alternating deposition/etch process to achieve equivalent etch depths of at least two different sized features on the substrate.
Inventors:
Rye, Shoryan
Johnson, David
Westerman, Russell
Johnson, David
Westerman, Russell
Application Number:
JP2007519305A
Publication Date:
February 21, 2008
Filing Date:
June 23, 2005
Export Citation:
Assignee:
Unaxis USA, Inc.
International Classes:
B81C1/00; C23F1/00; G01L21/30; G01R31/00; H01L21/302; H01L21/306; H01L21/3065; H01L21/461; H01L21/66
Domestic Patent References:
| JP2002529913A | 2002-09-10 | |||
| JPH05335397A | 1993-12-17 | |||
| JPH0290644A | 1990-03-30 |
Attorney, Agent or Firm:
Hideto Asamura
Hajime Asamura
Yutaka Yoshida
Toru Mori
Hajime Asamura
Yutaka Yoshida
Toru Mori