Title:
ペルフルオロエーテルアシルオリゴチオフェン化合物を含有する半導体
Document Type and Number:
Japanese Patent JP2008535794
Kind Code:
A
Abstract:
Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an a,?-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an a,?-bis(2- perfluoroether acyl oligothiophene compound.
More Like This:
Inventors:
Garrack, Christopher Pee.
Ender, David A.
Vogel, Dennis E.
Ender, David A.
Vogel, Dennis E.
Application Number:
JP2008500736A
Publication Date:
September 04, 2008
Filing Date:
February 23, 2006
Export Citation:
Assignee:
3M INNOVATIVE PROPERTIES COMPANY
International Classes:
C07D333/22; C07D333/28; H01L29/786; H01L51/05; H01L51/30; C07B61/00
Domestic Patent References:
| JPH03258863A | 1991-11-19 |
Foreign References:
| EP0393263A1 | 1990-10-24 |
Other References:
JPN5008001375; ＹＯＯＮ，Ｍ．-Ｈ．，ＥＴ ＡＬ．: '"Ｏｒｇａｎｉｃ Ｔｈｉｎ-Ｆｉｌｍ Ｔｒａｎｓｉｓｔｏｒｓ Ｂａｓｅｄ ｏｎ Ｃａｒｂｏｎｙｌ-Ｆｕｎｃｔｉｏｎａｌｉｚｅｄ Ｑａｔｅｒｔｈｉｏｐｈｅｎｅｓ： Ｈｉｇｈ Ｍｏｂｉｌｉｔｙ Ｎ-Ｃｈａ' ＪＯＵＲＮＡＬ ＯＦ ＴＨＥ ＡＭＥＲＩＣＡＮ ＣＨＥＭＩＣＡＬ ＳＯＣＩＥＴＹ ＶＯＬ．１２７，ＮＯ．１５, 20050115, ＰＰ．１３４８-１３４９
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu