Title:
直径100ミリメートルの炭化シリコン基板上の高均一性のIII族窒化物エピタキシャル層
Document Type and Number:
Japanese Patent JP2008544486
Kind Code:
A
Abstract:
A method for epitaxial growth of Group III nitrides on a substrate using source gases consistent with metal organic chemical vapor deposition is provided. A heterostructure formed from two Group III nitride epitaxial layers is grown on a substrate in an atmosphere containing minimal hydrogen. The two Group III nitride epitaxial layers differ sufficiently in composition from one another in order to generate a two-dimensional electron gas at their interface. The substrate upon which the heterostructure is grown has a diameter of at least 100 mm.
Inventors:
Saxler, Adam William
Hutchins, Edward Lloyd
Hutchins, Edward Lloyd
Application Number:
JP2008515692A
Publication Date:
December 04, 2008
Filing Date:
April 05, 2006
Export Citation:
Assignee:
Cree, Incorporated
International Classes:
H01L21/205; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2003086520A | 2003-03-20 | |||
| JP2003218127A | 2003-07-31 | |||
| JP2000174334A | 2000-06-23 | |||
| JP2002367916A | 2002-12-20 | |||
| JP2003059845A | 2003-02-28 | |||
| JPH10256167A | 1998-09-25 | |||
| JP2001057463A | 2001-02-27 | |||
| JP2001230500A | 2001-08-24 | |||
| JP2004096077A | 2004-03-25 | |||
| JP2003086520A | 2003-03-20 | |||
| JP2003218127A | 2003-07-31 | |||
| JP2000174334A | 2000-06-23 | |||
| JP2002367916A | 2002-12-20 | |||
| JP2003059845A | 2003-02-28 | |||
| JPH10256167A | 1998-09-25 | |||
| JP2001057463A | 2001-02-27 | |||
| JP2001230500A | 2001-08-24 | |||
| JP2004096077A | 2004-03-25 |
Other References:
JPN5008008075; ＣＡＲＴＥＲ Ｃ Ｈ: 'Ｌａｒｇｅ Ｄｉａｍｅｔｅｒ， Ｌｏｗ Ｄｅｆｅｃｔ Ｓｉｌｉｃｏｎ Ｃａｒｂｉｄｅ Ｂｏｕｌｅ Ｇｒｏｗｔｈ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＦＯＲＵＭ Ｖ３５３-３５６ Ｎ３, 2001, Ｐ３-６
JPN5008008076; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｐｒｏｇｒｅｓｓ ｉｎ ｔｈｅ ｉｎｄｕｓｔｒｉａｌ ｐｒｏｄｕｃｔｉｏｎ ｏｆ ＳｉＣ ｓｕｂｓｔｒａｔｅｓ ｆｏｒ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ｄｅｖｉｃｅｓ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＡＮＤ ＥＮＧＩＮＥＥＲＩＮＧ Ｂ Ｖ８０ Ｎ１-３, 20010322, Ｐ３２７-３３１, ＥＬＳＥＶＩＥＲ ＳＥＱＵＯＩＡ
JPN5008008077; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｔｈｅ ｓｔａｔｕｓ ｏｆ ＳｉＣ ｂｕｌｋ ｇｒｏｗｔｈ ｆｒｏｍ ａｎ ｉｎｄｕｓｔｒｉａｌ ｐｏｉｎｔ ｏｆ ｖｉｅｗ' ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＲＯＷＴＨ Ｖ２１１ Ｎ１-４, 200004, Ｐ３２５-３３２, ＥＬＳＥＶＩＥＲ
JPN5008008075; ＣＡＲＴＥＲ Ｃ Ｈ: 'Ｌａｒｇｅ Ｄｉａｍｅｔｅｒ， Ｌｏｗ Ｄｅｆｅｃｔ Ｓｉｌｉｃｏｎ Ｃａｒｂｉｄｅ Ｂｏｕｌｅ Ｇｒｏｗｔｈ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＦＯＲＵＭ Ｖ３５３-３５６ Ｎ３, 2001, Ｐ３-６
JPN5008008076; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｐｒｏｇｒｅｓｓ ｉｎ ｔｈｅ ｉｎｄｕｓｔｒｉａｌ ｐｒｏｄｕｃｔｉｏｎ ｏｆ ＳｉＣ ｓｕｂｓｔｒａｔｅｓ ｆｏｒ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ｄｅｖｉｃｅｓ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＡＮＤ ＥＮＧＩＮＥＥＲＩＮＧ Ｂ Ｖ８０ Ｎ１-３, 20010322, Ｐ３２７-３３１, ＥＬＳＥＶＩＥＲ ＳＥＱＵＯＩＡ
JPN5008008077; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｔｈｅ ｓｔａｔｕｓ ｏｆ ＳｉＣ ｂｕｌｋ ｇｒｏｗｔｈ ｆｒｏｍ ａｎ ｉｎｄｕｓｔｒｉａｌ ｐｏｉｎｔ ｏｆ ｖｉｅｗ' ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＲＯＷＴＨ Ｖ２１１ Ｎ１-４, 200004, Ｐ３２５-３３２, ＥＬＳＥＶＩＥＲ
JPN5008008076; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｐｒｏｇｒｅｓｓ ｉｎ ｔｈｅ ｉｎｄｕｓｔｒｉａｌ ｐｒｏｄｕｃｔｉｏｎ ｏｆ ＳｉＣ ｓｕｂｓｔｒａｔｅｓ ｆｏｒ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ｄｅｖｉｃｅｓ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＡＮＤ ＥＮＧＩＮＥＥＲＩＮＧ Ｂ Ｖ８０ Ｎ１-３, 20010322, Ｐ３２７-３３１, ＥＬＳＥＶＩＥＲ ＳＥＱＵＯＩＡ
JPN5008008077; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｔｈｅ ｓｔａｔｕｓ ｏｆ ＳｉＣ ｂｕｌｋ ｇｒｏｗｔｈ ｆｒｏｍ ａｎ ｉｎｄｕｓｔｒｉａｌ ｐｏｉｎｔ ｏｆ ｖｉｅｗ' ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＲＯＷＴＨ Ｖ２１１ Ｎ１-４, 200004, Ｐ３２５-３３２, ＥＬＳＥＶＩＥＲ
JPN5008008075; ＣＡＲＴＥＲ Ｃ Ｈ: 'Ｌａｒｇｅ Ｄｉａｍｅｔｅｒ， Ｌｏｗ Ｄｅｆｅｃｔ Ｓｉｌｉｃｏｎ Ｃａｒｂｉｄｅ Ｂｏｕｌｅ Ｇｒｏｗｔｈ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＦＯＲＵＭ Ｖ３５３-３５６ Ｎ３, 2001, Ｐ３-６
JPN5008008076; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｐｒｏｇｒｅｓｓ ｉｎ ｔｈｅ ｉｎｄｕｓｔｒｉａｌ ｐｒｏｄｕｃｔｉｏｎ ｏｆ ＳｉＣ ｓｕｂｓｔｒａｔｅｓ ｆｏｒ ｓｅｍｉｃｏｎｄｕｃｔｏｒ ｄｅｖｉｃｅｓ' ＭＡＴＥＲＩＡＬＳ ＳＣＩＥＮＣＥ ＡＮＤ ＥＮＧＩＮＥＥＲＩＮＧ Ｂ Ｖ８０ Ｎ１-３, 20010322, Ｐ３２７-３３１, ＥＬＳＥＶＩＥＲ ＳＥＱＵＯＩＡ
JPN5008008077; ＭＵＥＬＬＥＲ Ｓ Ｇ: 'Ｔｈｅ ｓｔａｔｕｓ ｏｆ ＳｉＣ ｂｕｌｋ ｇｒｏｗｔｈ ｆｒｏｍ ａｎ ｉｎｄｕｓｔｒｉａｌ ｐｏｉｎｔ ｏｆ ｖｉｅｗ' ＪＯＵＲＮＡＬ ＯＦ ＣＲＹＳＴＡＬ ＧＲＯＷＴＨ Ｖ２１１ Ｎ１-４, 200004, Ｐ３２５-３３２, ＥＬＳＥＶＩＥＲ
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita