Title:
アルミニウムガリウムナイトライドバッファ層を有する発光ダイオード及びその製造方法
Document Type and Number:
Japanese Patent JP2009530808
Kind Code:
A
Abstract:
The present invention relates to a light emitting diode having an AlxGa1-xN buffer layer and a method of fabricating the same, and more particularly, to a light emitting diode having an AlxGa1-xN buffer layer, wherein between a substrate and a GaN-based semiconductor layer, the Al x Ga 1-x N (O@x@1) buffer layer having the composition ratio x of Al decreasing from the substrate to the GaN-based semiconductor layer is interposed to reduce lattice mismatch between the substrate and the GaN-based semiconductor layer, and a method of fabricating the same. To this end, the present invention provides a light emitting diode comprising a substrate; a first conductive semiconductor layer positioned on the substrate; and an AlxGa1-xN (O@x@1) buffer layer interposed between the substrate and the first conductive semiconductor layer and having a composition ratio x of Al decreasing from the substrate to the first conductive semiconductor layer.
Inventors:
Nam, Kibom
Application Number:
JP2009500282A
Publication Date:
August 27, 2009
Filing Date:
March 09, 2007
Export Citation:
Assignee:
Soul Opto Device Company Limited
International Classes:
H01L21/205; H01L33/00; H01L33/12
Domestic Patent References:
| JPH0983016A | 1997-03-28 | |||
| JP2004179487A | 2004-06-24 | |||
| JP2000040858A | 2000-02-08 | |||
| JP2001230447A | 2001-08-24 |
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda
Atsushi Honda
Miho Ikegami
Makoto Onda
Atsushi Honda
Miho Ikegami