Title:
希ガスを含有するダブルプラズマ窒化物形成によるCMOSSiONゲート誘電性能の改善
Document Type and Number:
Japanese Patent JP2009545895
Kind Code:
A
Abstract:
A method of forming a layer comprising silicon and nitrogen on a substrate is provided. The layer may also include oxygen and be used as a silicon oxynitride gate dielectric layer. In one aspect, forming the layer includes exposing a silicon substrate to a plasma of nitrogen and a noble gas to incorporate nitrogen into an upper surface of the substrate, wherein the noble gas is argon, neon, krypton, or xenon. The layer is annealed and then exposed to a plasma of nitrogen to incorporate more nitrogen into the layer. The layer is then further annealed.
Inventors:
Olsen, Christopher
Application Number:
JP2009523906A
Publication Date:
December 24, 2009
Filing Date:
August 02, 2007
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
H01L21/318; H01L21/316; H01L29/78
Domestic Patent References:
| JP2006339370A | 2006-12-14 | |||
| JP2005328072A | 2005-11-24 | |||
| JP2005311352A | 2005-11-04 | |||
| JP2005235792A | 2005-09-02 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yuichi Yamada
Ikeda adult
Yuichi Yamada
Ikeda adult