Title:
半導体レーザの位相領域における波長制御
Document Type and Number:
Japanese Patent JP2011503908
Kind Code:
A
Abstract:
Particular embodiments of the present invention relate generally to semiconductor lasers and laser scanning systems and, more particularly, to schemes for controlling semiconductor lasers. According to one embodiment of the present invention, a laser is configured for optical emission of encoded data. At least one parameter of the optical emission is a function of a drive current IGAIN injected into the gain section of the semiconductor laser and one or more additional drive currents I/VPHASE, I/VDBR. Mode selection in the semiconductor laser is altered by applying a phase shifting signal I/VΦ to the phase section that is synched with a wavelength recovery portions in drive current IGAIN such that a plurality of cavity modes are shifted by one half of the free spectral range at each wavelength recovery portion. In this manner, patterned variations in the wavelength or intensity profile of the laser can be disrupted to disguise patterned flaws that would otherwise be readily noticeable in the output of the laser.
Inventors:
Gorie, jack
Application Number:
JP2010534952A
Publication Date:
January 27, 2011
Filing Date:
November 18, 2008
Export Citation:
Assignee:
CORNING INCORPORATED
International Classes:
H01S5/0687; G02F1/37
Attorney, Agent or Firm:
Yanagita Seiji
Go Sakuma
Go Sakuma