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Title:
金属酸化物基体上でのナノ構造体の製造方法、金属酸化物基体上への薄膜の付着方法、および薄膜装置
Document Type and Number:
Japanese Patent JP2011519314
Kind Code:
A
Abstract:
A method for producing nanostructures on a metal oxide substrate includes the following steps: a) forming metal aggregates on the metal oxide substrate; and b) vapor phase growing nanostructures on the metal oxide substrate covered with metal aggregates, the substrate being heated in the presence of one or more precursor gases, and the vapor phase growth of nanostructures being catalyzed by the metal aggregates. The metal aggregate formation stage a) includes an operation for reducing the surface of the metal oxide substrate by reductive plasma treatment, causing droplets of metal aggregates to form on the substrate, the metal aggregate formation stage a) and the nanostructure growth stage b) being carried out in series in a single shared plasma reactor chamber, the nanostructure growth being directly carried out on the droplets of metal aggregates.

Inventors:
Arepierre-Jean
Rocky Cabaroccus Pere
Application Number:
JP2011500274A
Publication Date:
July 07, 2011
Filing Date:
March 19, 2009
Export Citation:
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Assignee:
Ecole Polytechnic
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE(CNRS)
Commisaria Allenergy Atomic-Seua
International Classes:
B82B3/00; C01B33/029; C22B5/12; C22B19/20; C22B25/02; C22B58/00; C23C16/24; H01L21/205; C01B21/068; C01B31/02; C01B31/36
Other References:
JPN6013056613; Uschi M. Graham, et al.: 'Nanoweb Formation: 2D Self-Assembly of Semiconductor Gallium Oxide Nanowires/Nanotubes' Advaced Functional Matterials 13/7, 2003, 576-581, Wiley
JPN6013056614; Y. H. Wang, et al.: 'Macroscopic field emission properties of aligned carbon nanotubes array and randomly oriented carbon' Thin Solid Films 79/10, 2002, 243-247, ELSEVIER
Attorney, Agent or Firm:
Koichi Nakazato
Hitoshi Kawasaki
Keiji Mishima