Title:
垂直構造半導体発光素子製造用支持基板及びこれを用いた垂直構造半導体発光素子
Document Type and Number:
Japanese Patent JP2011528500
Kind Code:
A
Abstract:
The present invention is related to a light emitting device comprising a support (510); a second conductive layer (520) disposed on the support; a first conductive layer (530) disposed on the second conductive layer (520); an insulating layer (550) disposed on the second conductive layer (520); a second ohmic contact electrode (540) disposed on the first conductive layer (530); a light emitting structure (560) disposed on the second ohmic contact electrode (540), the light emitting structure (560) comprising an n-type group III-V nitride-based semiconductor layer, a group III-V nitride-based semiconductor active layer, and a p-type group III-V nitride-based semiconductor layer; a first ohmic contact electrode (570) disposed on the n-type group III-V nitride-based semiconductor layer; and a passivation layer (580) disposed on the insulating layer (550).
More Like This:
Inventors:
Naru Tairen
Application Number:
JP2011518649A
Publication Date:
November 17, 2011
Filing Date:
July 15, 2009
Export Citation:
Assignee:
Korea University Industrial and Academic Collaboration Foundation
International Classes:
H01L33/32
Domestic Patent References:
| JP2009514209A | 2009-04-02 | |||
| JP2008538658A | 2008-10-30 | |||
| JP2011517085A | 2011-05-26 | |||
| JP2007081089A | 2007-03-29 | |||
| JP2007536725A | 2007-12-13 | |||
| JP2006332681A | 2006-12-07 | |||
| JP2006516066A | 2006-06-15 | |||
| JP2007234865A | 2007-09-13 | |||
| JP2008147672A | 2008-06-26 | |||
| JP2005150675A | 2005-06-09 | |||
| JP2007158130A | 2007-06-21 |
Foreign References:
| WO2007049939A1 | 2007-05-03 |
Attorney, Agent or Firm:
Kazuko Fujita