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Title:
パルス状レーザ加工から半導体を保護する薄い犠牲マスキング膜
Document Type and Number:
Japanese Patent JP2011528504
Kind Code:
A
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JP5426618Manufacturing method of insulating structure, heating device, substrate processing device and semiconductor device
Inventors:
Carry, james
Application Number:
JP2011518692A
Publication Date:
November 17, 2011
Filing Date:
July 16, 2008
Export Citation:
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Assignee:
Sonics, ink.
International Classes:
H01L21/22; B23K26/00; B23K26/06; H01L27/14
Domestic Patent References:
JPH06151344A1994-05-31
JPH02152226A1990-06-12
JP2006148086A2006-06-08
JP2001338894A2001-12-07
JPH10510955A1998-10-20
JPH04329633A1992-11-18
JPH06260651A1994-09-16
Foreign References:
US20070187670A12007-08-16
US20040222187A12004-11-11
US20010044175A12001-11-22
US6291302B12001-09-18
US5114876A1992-05-19
Attorney, Agent or Firm:
Taro Yaguchi



 
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