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Title:
誘導結合型プラズマ生成電極及びこれを備える基板処理装置
Document Type and Number:
Japanese Patent JP2012517074
Kind Code:
A
Abstract:
An inductively coupled plasma-generating source electrode and a substrate-processing apparatus comprising same are disclosed. The present invention provides a plasma-generating source electrode (360) for generating an inductively coupled plasma (ICP) for substrate processing, comprising: a bent portion (362) having one or more bent points; a first electrode unit (361) arranged above a substrate (10) to be processed, and extending from the bent portion (362); and a second electrode unit (363) arranged below the substrate (10), and extending from the bent portion (362), the substrate being centered between said two electrode units. According to the present invention, uniform plasma density can be obtained over the whole area of the substrate to be processed, and signal attenuation can be prevented.

Inventors:
Lee, Kyung Ho
Application Number:
JP2011547800A
Publication Date:
July 26, 2012
Filing Date:
January 29, 2010
Export Citation:
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Assignee:
TERASEMICON CORPORATION
International Classes:
H05H1/46; C23C16/507; H01L21/3065; H01L21/31
Domestic Patent References:
JPH11317299A1999-11-16
JP2001351908A2001-12-21
JPS63299324A1988-12-06
JPH10214700A1998-08-11
Foreign References:
WO1996041897A21996-12-27
Attorney, Agent or Firm:
Patent business corporation Oshima patent office
Yoichi Oshima