Title:
半導体発光デバイス上に誘電体層を形成する方法
Document Type and Number:
Japanese Patent JP2012529172
Kind Code:
A
Abstract:
A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is formed. A first metal contact is formed on a portion of the n-type region and a second metal contact is formed on a portion of the p-type region. The first and second metal contacts are formed on a same side of the semiconductor structure. A dielectric material is disposed between the first and second metal contacts. The dielectric material is in direct contact with a portion of the semiconductor structure, a portion of the first metal contact, and a portion of the second metal contact. A planar surface is formed including a surface of the first metal contact, a surface of the second metal contact, and a surface of the dielectric material
Inventors:
Rafael, Ardas
Nef, James G
Nef, James G
Application Number:
JP2012513705A
Publication Date:
November 15, 2012
Filing Date:
May 27, 2010
Export Citation:
Assignee:
Philips Lumileds Lighting Company Limited Liability Company
Koninklijke Philips Electronics N.V.
Koninklijke Philips Electronics N.V.
International Classes:
H01L21/768; H01L33/38; H01L23/522; H01L33/62
Domestic Patent References:
| JP2005116846A | 2005-04-28 | |||
| JP2007335734A | 2007-12-27 | |||
| JP2008047834A | 2008-02-28 | |||
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Foreign References:
| WO2009020365A2 | 2009-02-12 |
Attorney, Agent or Firm:
Tadahiko Ito
Shinsuke Onuki
Tadashige Ito
Shinsuke Onuki
Tadashige Ito