Title:
非極性または半極性(Ga、Al、In、B)N基板上に成長させられた(Ga、Al、In、B)Nレーザダイオードの鏡面劈開収率を向上させるための構造
Document Type and Number:
Japanese Patent JP2012533179
Kind Code:
A
Abstract:
A structure for improving the mirror facet cleaving yield of (Ga,Al,In,B)N laser diodes grown on nonpolar or semipolar (Ga,Al,In,B)N substrates. The structure comprises a nonpolar or semipolar (Ga,Al,In,B)N laser diode including a waveguide core that provides sufficient optical confinement for the device's operation in the absence of p-type doped aluminum-containing waveguide cladding layers, and one of more n-type doped aluminum-containing layers that can be used to assist with facet cleaving along a particular crystallographic plane.
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Inventors:
Pharrell, Robert M.
Hardy, Matthew Tea.
Hiroo Ota
Denver, Stephen Pea.
Specs, James S.
Nakamura, Shuji
Hardy, Matthew Tea.
Hiroo Ota
Denver, Stephen Pea.
Specs, James S.
Nakamura, Shuji
Application Number:
JP2012519769A
Publication Date:
December 20, 2012
Filing Date:
July 09, 2010
Export Citation:
Assignee:
The Regents of The University of California
International Classes:
H01S5/343
Attorney, Agent or Firm:
Hidesaku Yamamoto
Takaaki Yasumura
Natsuki Morishita
Takaaki Yasumura
Natsuki Morishita