Title:
高温でのIV族金属含有膜の堆積
Document Type and Number:
Japanese Patent JP2012533680
Kind Code:
A
Abstract:
Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (upsilon)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.
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Inventors:
Gatineau, Julian
Ko, Changhae
Ko, Changhae
Application Number:
JP2012520144A
Publication Date:
December 27, 2012
Filing Date:
July 14, 2010
Export Citation:
Assignee:
Rail Liquide-Societe Anonym Pools Retude e Rex Prosatation de Procede Georges Claude
International Classes:
C23C16/30; H01L21/28; H01L21/285; H01L21/316
Attorney, Agent or Firm:
Kurata Masatoshi
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori
Takakura Shigeo
Satoshi Kono
Makoto Nakamura
Yoshihiro Fukuhara
Takashi Mine
Toshio Shirane
Sadao Muramatsu
Nobuhisa Nogawa
Kocho Chojiro
Naoki Kono
Katsu Sunagawa
Morisezo Iseki
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Takenori Masanori