Title:
アニオン制御された誘電特性を有するペロブスカイト材料、薄膜コンデンサ装置、及びそれらの製造方法
Document Type and Number:
Japanese Patent JP2013543205
Kind Code:
A
Abstract:
A crystalline perovskite crystalline composite paraelectric material includes nano-regions containing rich N3− anions dispersed in a nano-grain sized matrix of crystalline oxide perovskite material, wherein (ABO3−δ)α-(ABO3−δ−γNγ)1−α. A represents a divalent element, B represents a tetravalent element, γ satisfies 0.005≰γ≰1.0, 1−α satisfies 0.05≰1−α≰0.9, and 1−α is an area ratio between the regions containing rich N3− anions and the matrix of remaining oxide perovskite material.
Inventors:
Kutsalofo, Yvoyl Pee
Shinichi Hinoki
Yo Ando
Shinichi Hinoki
Yo Ando
Application Number:
JP2013505565A
Publication Date:
November 28, 2013
Filing Date:
April 28, 2011
Export Citation:
Assignee:
MURATA MANUFACTURING CO.,LTD.
International Classes:
C01G23/00; H01B3/12; H01G4/12; H01G4/33; H01G7/06
Domestic Patent References:
| JP2001135143A | 2001-05-18 | |||
| JPS61122108A | 1986-06-10 | |||
| JPS61269804A | 1986-11-29 |
Attorney, Agent or Firm:
Patent business corporation Profic patent office