Title:
太陽光発電用成長層
Document Type and Number:
Japanese Patent JP2014506958
Kind Code:
A
Abstract:
Sputtered zinc oxide layer is used to improve and control the crystalline properties of a molybdenum back contact used in photovoltaic cells. Optimum thicknesses for the zinc oxide layer are identified.
Inventors:
Nail Max Polan
Application Number:
JP2013552273A
Publication Date:
March 20, 2014
Filing Date:
February 03, 2012
Export Citation:
Assignee:
Pilkington Group Limited
International Classes:
C23C14/14; C23C14/06; C23C14/08; C23C16/42; H01L21/28; H01L31/06
Domestic Patent References:
| JP2006222384A | 2006-08-24 | |||
| JP2009170728A | 2009-07-30 | |||
| JPH08222750A | 1996-08-30 | |||
| JP2011517132A | 2011-05-26 | |||
| JP2006222384A | 2006-08-24 | |||
| JP2009170728A | 2009-07-30 | |||
| JPH08222750A | 1996-08-30 | |||
| JP2011517132A | 2011-05-26 |
Foreign References:
| US20080308147A1 | 2008-12-18 | |||
| US5626688A | 1997-05-06 | |||
| US20090260678A1 | 2009-10-22 | |||
| US20080308147A1 | 2008-12-18 | |||
| US5626688A | 1997-05-06 | |||
| US20090260678A1 | 2009-10-22 |
Attorney, Agent or Firm:
Kenji Sugimura
Kazuyuki Tomita
Hiroshi Ikeda
Kazuyuki Tomita
Hiroshi Ikeda