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Title:
多元素ドープ酸化亜鉛薄膜、その製作方法及び応用
Document Type and Number:
Japanese Patent JP2014514442
Kind Code:
A
Abstract:
The invention relates to the semiconductor material manufacturing technical field. A multi-elements-doped zinc oxide film as well as manufacturing method and application in photo-electric devices thereof are provided. The manufacturing method comprises the following steps: (1) mixing the powder of Ga 2 O 3 , Al 2 O 3 , SiO 2 and ZnO according to the following percentage by mass: 0.5%ˆ¼10 % of Ga 2 O 3 , 0.5%ˆ¼5 % of Al 2 O 3 , 0.5 % ˆ¼1.5 % of SiO 2 , and the residue of ZnO; (2)sintering the powder mixture as target material; (3) putting the target material into a magnetic sputtering chamber, evacuating, setting-up work pressure of 0.2Paˆ¼5Pa, introducing mixed gas of inert gas and hydrogen with a flow rate of 15sccmˆ¼25sccm, adopting a sputtering power of 40Wˆ¼200W, and sputtering on the substrate to obtain the multi-elements-doped zinc oxide film.

Inventors:
Joe, Minjie
One, pin
Chen, Jishin
Juan, Hui
Application Number:
JP2014500228A
Publication Date:
June 19, 2014
Filing Date:
March 25, 2011
Export Citation:
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Assignee:
Sea Young Lighting Technology Fun Co., Ltd.
International Classes:
C23C14/34; C04B35/453; C23C14/08; H01B5/14; H01B13/00
Domestic Patent References:
JP2009228034A2009-10-08
JP2000119062A2000-04-25
JPH11236219A1999-08-31
JPH11256320A1999-09-21
JP2011009069A2011-01-13
JP2009199812A2009-09-03
JP2010519720A2010-06-03
JP2002363732A2002-12-18
JP2012049218A2012-03-08
JP2009228034A2009-10-08
JP2000119062A2000-04-25
JPH11236219A1999-08-31
JPH11256320A1999-09-21
JP2011009069A2011-01-13
JP2009199812A2009-09-03
JP2010519720A2010-06-03
JP2002363732A2002-12-18
JP2012049218A2012-03-08
Foreign References:
WO2009145152A12009-12-03
US20100089623A12010-04-15
WO2009145152A12009-12-03
US20100089623A12010-04-15
Attorney, Agent or Firm:
Kimura Mitsuru
Takanori Mamoru
Taiji Morikawa
Amamiya Yasuhito
Kei Sakurada
Mie Hideki