Title:
基板上に少粒子層を形成するための方法および装置
Document Type and Number:
Japanese Patent JP2014520966
Kind Code:
A
Abstract:
The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depositing a layer of source material, having sputtering gas (11) and reactive gas (8), on the substrate in a magnetron sputtering device (2, 3, 4). The rotary plate is rotated so that the magnetron sputtering device is controlled and a cylindrical source material of a magnetron electrode (5, 6, 7) is upwardly deposited to the substrate against gravity. The layers are formed form the cylindrical source material of the magnetron electrode. The method is carried out by a plasma source. The process comprises immobilizing a substrate using a substrate holder on a rotary plate, and depositing a layer of source material, having sputtering gas (11) and reactive gas (8), on the substrate in a magnetron sputtering device (2, 3, 4). The rotary plate is rotated so that the magnetron sputtering device is controlled and a cylindrical source material of a magnetron electrode (5, 6, 7) is upwardly deposited to the substrate against gravity. The layers are formed form the cylindrical source material of the magnetron electrode. The method is carried out using a plasma source. A surface of the substrate is pretreated using the plasma source, which provides effects on the substrate including adjusting a temperature of the substrate, cleaning the substrate by a degradation of an organic contaminant on the substrate and activating the surface of the substrate. A structure and/or a stoichiometry of the layer are modified by the plasma effect, where the plasma source provides effects on the layer including adjusting the temperature of a microstructure of a layer on the substrate, reducing stress layer in the layer on the substrate by minimizing a boundary layer thickness and/or a boundary layer expansion between individual layers on the substrate and activating the surface of the layer on the substrate. The plasma source is controlled by the rotary plate. The rotary plate is rotated with a velocity of 150-200 revolutions per minute. A process pressure in the magnetron sputtering device is 3x 10 -> 4>to 5x 10 -> 2>mbar. A partial pressure of the sputtering gas and/or the reactive gas in the magnetron sputtering device is controlled and/or stabilized by controlling a generator power, a generator voltage and/or a generator current. The method further comprises controlling a thickness of the layer on the substrate by optical transmission monitoring, optionally via polarized transmission measurements, optical reflection monitoring, optionally via polarized reflectance measurements, optical absorption monitoring and/or single-wavelength ellipsometry or spectral ellipsometry. The temperature of heated elements is adjusted to a cover of a device in dependence on the layer to be produced, and/or is changed during a coating process to a temperature of 50-450[deg] C. The substrate is heated to a temperature of 20-300[deg] C. An independent claim is included for an apparatus for producing particle-free layers on a moving substrate in a vacuum by magnetron sputtering.
Inventors:
Fell Gail, Michael
ラーデ Mach, Daniel
クリヘルドルフ, Hans * Ulrich
Braugher, Guenter
ラーデ Mach, Daniel
クリヘルドルフ, Hans * Ulrich
Braugher, Guenter
Application Number:
JP2014520689A
Publication Date:
August 25, 2014
Filing Date:
July 23, 2012
Export Citation:
Assignee:
Hula オンホ fur * gesellschaft ツア フェルデルング Dare アンゲヴァンテン フォルシュング Ey Fao
International Classes:
C23C14/34; C23C14/02; C23C14/52
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Other References:
M VERGOEHL: "PARTICLE GENERATION DURING REACTIVE MAGNETRON SPUTTERING OF SIO2 WITH CYLINDRICAL 以下備考", OPTICAL INTERFERENCE COATINGS [ONLINE], JPN5014008649, 6 October 2010 (2010-10-06), US, ISSN: 0003281218
M VERGOEHL: "PARTICLE GENERATION DURING REACTIVE MAGNETRON SPUTTERING OF SIO2 WITH CYLINDRICAL AND PLANAR CATHODE", OPTICAL INTERFERENCE COATINGS, JPN6017011779, 6 October 2010 (2010-10-06), US, ISSN: 0003537980
M VERGOEHL: "PARTICLE GENERATION DURING REACTIVE MAGNETRON SPUTTERING OF SIO2 WITH CYLINDRICAL AND PLANAR CATHODE", OPTICAL INTERFERENCE COATINGS, JPN6017011779, 6 October 2010 (2010-10-06), US, ISSN: 0003537980
Attorney, Agent or Firm:
Ono Shinjiro
Kobayashi 泰
Shigeo Takeuchi
Yamamoto 修
Mitsutoshi Nakamura
Kobayashi 泰
Shigeo Takeuchi
Yamamoto 修
Mitsutoshi Nakamura