RESIST PATTERN FORMING METHOD AND PROTECTIVE FILM FORMING COMPOSITION

Japanese Patent JP2015025880

A

PROBLEM TO BE SOLVED: To provide a novel resist pattern forming method capable of improving nano-edge roughness and capable of suppressing the occurrence of outgassing while sufficiently satisfying sensitivity.SOLUTION: The present invention is the resist pattern forming method comprising the steps of: forming a resist film with a radiation-sensitive resin composition; laminating a protective film on the resist film with a protective film forming composition; exposing the resist film on which the protective film is laminated; and developing the exposed resist film. The protective film forming composition contains [A] a polymer containing at least one selected from the group consisting of a structural unit represented by formula (i-1) and a structural unit represented by formula (i-2), and [B] an organic solvent.

JPH03171050	IMAGE RECORDING MEDIUM
JP2012004349	FORMING METHOD OF SILICON OXYNITRIDE FILM AND SUBSTRATE WITH SILICON OXYNITRIDE FILM MANUFACTURED USING THE SAME
WO/2023/002928	FILM-FORMING MATERIAL FOR SEMICONDUCTOR, MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, PROCESS MEMBER-FORMING MATERIAL FOR SEMICONDUCTOR, UNDERLAYER FILM-FORMING MATERIAL, UNDERLAYER FILM, AND SEMICONDUCTOR DEVICE

NISHINO KOTA
KAWAKAMI TAKANORI
SHIRATANI MOTOHIRO
HOSHIKO KENJI
INUKAI KOJI

JP2013154047A

February 05, 2015

July 24, 2013

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JSR CORP

G03F7/11; C08F226/06; C08F232/08; G03F7/039; H01L21/027

JP2013140319A	2013-07-18
JP2008065304A	2008-03-21
JP2014081496A	2014-05-08
JP2014063038A	2014-04-10
JP2007316307A	2007-12-06

Kazuki Amano
Yoshinori Ikeda
Hiroo Ogawa
Koji Ishida
Koju Kagami
Yoshiaki Negi
Takashi Shiotani

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