Title:
FILM DEPOSITION APPARATUS AND FILM DEPOSITION METHOD
Document Type and Number:
Japanese Patent JP2018062703
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To deposit a film in a coaxial distribution of a film thickness at a high productivity when a reaction product is laminated on a surface of a wafer by supplying raw material gas and reaction gas in an order to the wafer, the raw material gas and the reaction gas reacting each other.SOLUTION: Two tables 2 each which rotates wafers Wa, Wb around a vertical axis are arranged in a treatment chamber 10, a 3DMAS gas supply part 30A and an Ogas supply part 30B each of which supplies 3DMAS gas and Ogas from a center part to a peripheral part of the wafer Wa, Wb mounted on each of the tables 2 are rotated around an axis part 31 positioned at a center point of a straight line connecting the wafer Wa, Wb mounted on the table 2, and a gas supply unit 3 is provided, the gas supply unit being configured to extend in an opposite direction from the axis part 31 each other. A gas exhaust port 38 is provided around a gas discharge port 33 in the 3DMAS gas supply part 30A and the Ogas supply part 30B, and a separation gas discharge port 41 for forming an air flow curtain of separation gas is provided around the gas exhaust port 38.SELECTED DRAWING: Figure 2
Inventors:
NAKAZATO YUKA
HONMA MANABU
HONMA MANABU
Application Number:
JP2016202926A
Publication Date:
April 19, 2018
Filing Date:
October 14, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C16/455; H01L21/31; H01L21/316
Domestic Patent References:
| JP2015209557A | 2015-11-24 | |||
| JP2012501537A | 2012-01-19 | |||
| JP2014159636A | 2014-09-04 | |||
| JP2010229436A | 2010-10-14 | |||
| JP2016156066A | 2016-09-01 |
Attorney, Agent or Firm:
Patent Corporation Yayoi Patent Office
Toshio Inoue
Nobuaki Takizawa
Toshio Inoue
Nobuaki Takizawa