Title:
METHOD FOR PRODUCING POLYCRYSTALLINE SILICON ROD AND POLYCRYSTALLINE SILICON ROD
Document Type and Number:
Japanese Patent JP2018123033
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a production technique for making residual stress and crystal orientation existing in a polycrystalline silicon rod suitable as a raw material for producing a single crystal silicon.SOLUTION: In a method for producing a polycrystalline silicon rod of the present invention, a value of D/L is set to be 0.40 or more and 0.90 or less, provided that D (mm) is an average of diameters of polycrystalline silicon rods after a crystallization step, and L (mm) is a mutual interval between plural pairs of silicon core lines when polycrystalline silicon rods are manufactured by Siemens method, disposing the plural pairs of silicon core lines in a reaction furnace. In this method, ΔT (=Tc-Ts) of difference between a center temperature (Tc) and a surface temperature(Ts) of polycrystalline silicon rods under the crystallization step is controlled preferably to 100°C or less while surfaces of the polycrystalline silicon rods under the crystallization step are heated by radiation from surfaces of neighboring polycrystalline silicon rods.SELECTED DRAWING: None
Inventors:
MIYAO SHUICHI
HOSHINO SHIGEO
OKADA TETSUO
ISHIDA MASAHIKO
NETSU SHIGEYOSHI
HOSHINO SHIGEO
OKADA TETSUO
ISHIDA MASAHIKO
NETSU SHIGEYOSHI
Application Number:
JP2017017412A
Publication Date:
August 09, 2018
Filing Date:
February 02, 2017
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
C01B33/035
Domestic Patent References:
| JP2016003164A | 2016-01-12 | |||
| JP2016052970A | 2016-04-14 | |||
| JP2014522799A | 2014-09-08 |
Foreign References:
| WO2013125207A1 | 2013-08-29 | |||
| WO2010098319A1 | 2010-09-02 |
Attorney, Agent or Firm:
Seiji Ohno
Koji Morita
Kenichi Katayama
Koji Morita
Kenichi Katayama