Title:
COMPOUND SEMICONDUCTOR THIN-FILM MANUFACTURING METHOD USING DILUTED NITRIDE SACRIFICIAL LAYER
Document Type and Number:
Japanese Patent JP2018138501
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To set a sacrificial layer film thickness suitable for epitaxial lift-off as a compound semiconductor thin-film manufacturing method using epitaxial lift-off, and to provide a semiconductor thin-film excellent in crystallizability.SOLUTION: The present invention includes: (a) forming, on a semiconductor substrate, a sacrificial layer which lattice-matches the semiconductor substrate by way of a buffer layer; (b) forming, on the sacrificial layer, a light-receiving layer comprised of a semiconductor material which lattice-matches the sacrificial layer; (c) pasting, onto the light-receiving layer, a support substrate which is different from the semiconductor substrate; and (d) separating the semiconductor substrate and the support substrate by etching of the sacrificial layer. The sacrificial layer is made up of a III-V-N mixed crystal comprising the N element.SELECTED DRAWING: Figure 1
Inventors:
YAMANE KEISUKE
Application Number:
JP2017033467A
Publication Date:
September 06, 2018
Filing Date:
February 24, 2017
Export Citation:
Assignee:
UNIV TOYOHASHI TECHNOLOGY
International Classes:
C30B29/38; C30B23/08; H01L31/0248
Domestic Patent References:
| JP2003077840A | 2003-03-14 | |||
| JPH06334168A | 1994-12-02 | |||
| JP2008254966A | 2008-10-23 |