Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018152386
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To increase a degree of design freedom, and to achieve miniaturization of a trench gate type transistor.SOLUTION: A semiconductor device does not have such a structure that a gate electrode and a field plate are extended and elongated in parallel, but has such a structure that the gate electrode and the field plate electrode are extended and elongated in directions crossing each other. The gate electrode and the field plate electrode may be put into separate trenches, or the same trench. In addition, these layouts can be not only used selectively but also used mixedly. Thereby, a degree of design freedom is increased, and the semiconductor device can be further miniaturized.SELECTED DRAWING: Figure 2
Inventors:
CHEN YI
FUKUNAGA SHUNSUKE
SATO TETSUO
FUKUNAGA SHUNSUKE
SATO TETSUO
Application Number:
JP2017045527A
Publication Date:
September 27, 2018
Filing Date:
March 10, 2017
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L29/78; H01L29/06; H01L29/41