Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018152388
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To create a structure in which high breakdown voltage and shortening of switching time are achieved at the same time.SOLUTION: The present invention is related to a structure in which high breakdown voltage and shortening of switching time are achieved at the same time. In a PN junction type semiconductor device, on an N-type semiconductor, a concave insulation film pan is formed in a direction in which a recess is located opposite to a P-type semiconductor region. By capturing electrons in the pan during switching operation, the inside of the pan substantially becomes the same state as a P-layer and breakdown voltage is improved. Moreover, by acting as a trap to capture the electrons, the switching time can be shortened.SELECTED DRAWING: Figure 2
Inventors:
CHEN YI
Application Number:
JP2017045539A
Publication Date:
September 27, 2018
Filing Date:
March 10, 2017
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD
International Classes:
H01L29/861; H01L29/06; H01L29/868