Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2018170305
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a vertical structure semiconductor device by which a leakage current along a lateral face, and breakage, cracks, cleavage and the like of the lateral face are less likely to be generated.SOLUTION: A semiconductor device comprises: a semiconductor layer 20 that has first and second electrode formation surfaces 20a and 20b, and a lateral face 20c; an anode electrode 40 formed on the first electrode formation surface 20a; a cathode electrode 50 formed on the second electrode formation surface 20b; and an insulating film 30 continuously formed from the first electrode formation surface 20a to the lateral face 20c so as to cover a first edge E1. According to the present invention, since the lateral face 20c of the semiconductor layer 20 is covered with the insulating film 30 a leakage current along the lateral face 20c is reduced. In addition, since the lateral face 20c is protected by the insulating film 30, breakage, cracks, cleavage and the like of the lateral face 20c are less likely to be generated.SELECTED DRAWING: Figure 1
Inventors:
HIRABAYASHI JUN
FUJITA MINORU
FUKUMITSU YOSHIAKI
FUJITA MINORU
FUKUMITSU YOSHIAKI
Application Number:
JP2017064123A
Publication Date:
November 01, 2018
Filing Date:
March 29, 2017
Export Citation:
Assignee:
TDK CORP
International Classes:
H01L29/872; H01L21/316; H01L21/318; H01L21/365; H01L29/06; H01L29/47
Domestic Patent References:
| JP2009267032A | 2009-11-12 | |||
| JP2013102081A | 2013-05-23 | |||
| JP2004119472A | 2004-04-15 | |||
| JP2013187438A | 2013-09-19 |
Attorney, Agent or Firm:
Mitsuhiro Washito
Ogata Japanese
Yasuyuki Kurose
Ogata Japanese
Yasuyuki Kurose