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Title:
POWER SEMICONDUCTOR MODULE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2018200963
Kind Code:
A
Abstract:
To improve reliability in manufacturing efficiency, assembling accuracy, and electrical connection.SOLUTION: A power semiconductor module comprises: a terminal-having case 20 having a resin part 21 and a terminal part 22 and holding a power semiconductor chip 11; and a columnar relay member 2 connecting a gate electrode 11G, provided on an upper surface of the power semiconductor chip, and the terminal part. The terminal-having case has an insertion part 23 through which the relay member is inserted in its longitudinal direction. A connection surface 22b of the terminal part with respect to the relay member is at least part of an inner edge of the insertion part, and the insertion part is disposed in the gate electrode as viewed from the direction of the center axis A of the insertion part (the direction of Z axis). The relay member is inserted into the insertion part, one end extending from the insertion part is connected to the gate electrode via a solder S1, and a side 2a is connected to the connection surface via a solder S2.SELECTED DRAWING: Figure 1

Inventors:
MIYATAKE KAZUNORI
HOSOI YASUYUKI
Application Number:
JP2017105227A
Publication Date:
December 20, 2018
Filing Date:
May 29, 2017
Export Citation:
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Assignee:
KYOCERA CORP
International Classes:
H01L25/18; H01L25/07
Domestic Patent References:
JP2015035437A2015-02-19
JP2015012270A2015-01-19
JP2015053241A2015-03-19
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune



 
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