Title:
OVERHEAT PROTECTION CIRCUIT OF POWER SUPPLY DEVICE AND THE POWER SUPPLY DEVICE WITH THE SAME
Document Type and Number:
Japanese Patent JP2019022410
Kind Code:
A
Abstract:
To improve accuracy of an overheat detection and appropriately perform an overheat protection.SOLUTION: An overheat protection circuit 10 includes: a Schottky barrier diode (SBD)D4; a transistor Q2; and a driver IC13 or the like. The Schottky barrier diode D4 includes: a rectifier diode D4a connected to an auxiliary winding T1c; and an overheat detection diode D4b that is arranged on a primary side of a transformer T1 thermally connected with the rectifier diode D4a. In an overload operation state, the temperature of the Schottky barrier diode D4 is increased, and a current IR leaked in an inverse direction is increased. When a value of the current IR leaked in the inverse direction exceeds a threshold value, the transistor Q2 is switched to ON from OFF. Thus, a signal is input into a current detection terminal CS of a driver IC13, and the driver IC13 latches and stops the output from a secondary winding T1b.SELECTED DRAWING: Figure 1
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Inventors:
TANABE SHINTARO
Application Number:
JP2017141700A
Publication Date:
February 07, 2019
Filing Date:
July 21, 2017
Export Citation:
Assignee:
NICHICON CORP
International Classes:
H02M3/28; H02H5/04; H02H7/125
Domestic Patent References:
| JP2007174753A | 2007-07-05 |
Foreign References:
| WO2004017507A1 | 2004-02-26 | |||
| WO2014171204A1 | 2014-10-23 |
Attorney, Agent or Firm:
Kaji/Suhara Patent Office