Title:
METHOD AND APPARATUS FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM
Document Type and Number:
Japanese Patent JP2019029582
Kind Code:
A
Abstract:
To suppress oxidation of a tungsten film when a silicon oxide film is formed by using oxygen active species such as oxygen radicals on the tungsten film.SOLUTION: A method for forming a silicon oxide film on a tungsten film includes a first step of bringing a workpiece having a tungsten film having a natural oxide film formed on the surface thereof in a state of being placed in a processing vessel under reduced pressure, a second step of adsorbing a silicon-containing gas on the tungsten film and forming a silicon seed layer, a third step of annealing the workpiece to form a silicon oxide film by a reaction between the natural oxide film and the silicon seed layer, and a fourth step of forming an ALD silicon oxide film by ALD using a silicon-containing gas and oxygen active species.SELECTED DRAWING: Figure 2
Inventors:
GAO JING SHUO
SASAKI KOJI
IKEUCHI TOSHIYUKI
SASAKI KOJI
IKEUCHI TOSHIYUKI
Application Number:
JP2017149959A
Publication Date:
February 21, 2019
Filing Date:
August 02, 2017
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/316; C23C16/42; C23C16/455; C23C16/50; H01L21/31; H01L21/336; H01L27/11521; H01L27/11556; H01L27/11565; H01L27/11582; H01L29/788; H01L29/792
Domestic Patent References:
| JP2012138500A | 2012-07-19 | |||
| JP2015141977A | 2015-08-03 | |||
| JP2005150416A | 2005-06-09 | |||
| JP2015133355A | 2015-07-23 | |||
| JP2016157884A | 2016-09-01 | |||
| JP2006054432A | 2006-02-23 |
Attorney, Agent or Firm:
Hiroshi Takayama