Title:
METAL OXYNITRIDE THIN FILM, METHOD FOR MANUFACTURING THE SAME, AND CAPACITANCE ELEMENT
Document Type and Number:
Japanese Patent JP2019091888
Kind Code:
A
Abstract:
To provide a metal oxynitride thin film having a high insulation resistance while having good dielectric characteristics, a manufacturing method thereof, and a capacitance element including the metal oxynitride thin film.SOLUTION: A metal oxynitride thin film has a perovskite structure. The metal oxynitride thin film has a composition represented by the compositional formula, ABON, where α is larger than 0 and equal to or smaller than 0.300, x+α is larger than 2.450, and y is 0.300 or more and 0.700 or less. The metal oxynitride thin film has an AO structure which is a layered structure in parallel with a plane perpendicular to c-axis of the perovskite structure, and has a composition represented by the general formula AO. The AO structure is bound to and incorporated in the perovskite structure.SELECTED DRAWING: Figure 5
Inventors:
YAMAZAKI KUMIKO
NAGAMINE YUKI
SHIBAHARA TAKESHI
UMEDA YUJI
YAMAZAKI JUNICHI
NAGAMINE YUKI
SHIBAHARA TAKESHI
UMEDA YUJI
YAMAZAKI JUNICHI
Application Number:
JP2018196779A
Publication Date:
June 13, 2019
Filing Date:
October 18, 2018
Export Citation:
Assignee:
TDK CORP
International Classes:
H01G4/33; C01G23/00; C01G33/00; C01G35/00; C01G41/00; C23C14/06; H01B3/00; H01G4/10; H01L41/187; H01L41/316
Domestic Patent References:
| JP2018174305A | 2018-11-08 | |||
| JP2018174303A | 2018-11-08 |
Foreign References:
| WO2017057745A1 | 2017-04-06 | |||
| WO2017135298A1 | 2017-08-10 |
Attorney, Agent or Firm:
Maeda/Suzuki International Patent Corporation