Title:
QUANTUM DOT DEVICE AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2019096603
Kind Code:
A
Abstract:
To provide a quantum dot device capable of achieving improved performance.SOLUTION: A quantum dot device includes an anode, a hole injection layer disposed on the anode, a hole transport layer disposed on the hole injection layer, a quantum dot layer disposed on the hole transport layer, and a cathode disposed on the quantum dot layer. In the quantum dot device, a HOMO energy level of the quantum dot layer is greater than or equal to 5.6 eV, a difference between a HOMO energy level of the hole transport layer and a HOMO energy level of the quantum dot layer is less than 0.5 eV, the hole injection layer has a first surface adjacent to the anode and a second surface adjacent to the hole transport layer, and a HOMO energy level of the first surface of the hole injection layer is different from a HOMO energy level of the second surface of the hole injection layer.SELECTED DRAWING: Figure 1
Inventors:
XU HONG GUI
CHO GINSHU
CHUNG DAEYOUNG
KIM TAE-HO
LEE SANG JIN
CHO GINSHU
CHUNG DAEYOUNG
KIM TAE-HO
LEE SANG JIN
Application Number:
JP2018209907A
Publication Date:
June 20, 2019
Filing Date:
November 07, 2018
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
H05B33/14; H01L51/50
Domestic Patent References:
| JP2012248842A | 2012-12-13 | |||
| JP2012248843A | 2012-12-13 | |||
| JP2019119831A | 2019-07-22 |
Foreign References:
| WO2015056749A1 | 2015-04-23 |
Attorney, Agent or Firm:
Kyosei International Patent Office