Title:
SILICON CARBIDE SEMICONDUCTOR COMPONENT HAVING EDGE TERMINATION STRUCTURE
Document Type and Number:
Japanese Patent JP2019096878
Kind Code:
A
Abstract:
To provide a silicon carbide semiconductor component having an edge termination structure.SOLUTION: A semiconductor component (500) includes a SiC semiconductor body (100) having an active region (610) and an edge termination structure (190) surrounding the active region (610) at least partially. A first conductivity type drift zone (131) is formed in the SiC semiconductor body (100). The edge termination structure (190) includes a second conductivity type first dope region (191) between the first surface (101) of the SiC semiconductor body (100) and the drift zone (131). The first dope region (191) surrounds the active region (610) at least partially, and is placed while spaced apart from the first surface (101). The edge termination structure (190) further includes a second conductivity type second dope region (192) between the first surface (101) and the first dope region (191), and a first conductivity type third dope region (193) between the second dope regions (192).SELECTED DRAWING: Figure 3
Inventors:
LARISSA WEHRHAHN-KILIAN
RUDOLF ELPELT
ROLAND RUPP
RALF SIEMIENIEC
BERND ZIPPELIUS
RUDOLF ELPELT
ROLAND RUPP
RALF SIEMIENIEC
BERND ZIPPELIUS
Application Number:
JP2018216989A
Publication Date:
June 20, 2019
Filing Date:
November 20, 2018
Export Citation:
Assignee:
INFINEON TECHNOLOGIES AG
International Classes:
H01L29/78; H01L29/06; H01L29/12
Domestic Patent References:
| JP2018022851A | 2018-02-08 |
Foreign References:
| WO2014045480A1 | 2014-03-27 | |||
| WO2013046908A1 | 2013-04-04 | |||
| WO2012137659A1 | 2012-10-11 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation