Title:
CRUCIBLE
Document Type and Number:
Japanese Patent JP2019131422
Kind Code:
A
Abstract:
To provide a crucible capable of producing a high quality crystal by reducing thermal stress imposed on a crystal.SOLUTION: A crucible 11 is used to grow a silicon carbide single crystal by a sublimation method. The crucible 11 includes a cylindrical peripheral wall part 12, a bottom wall part 13 that is connected to the peripheral wall part 12 and closes an opening of the peripheral wall part 12, a pedestal part 23 as a holding part for holding a seed crystal T in the space 15 enclosed by the peripheral wall part 12, and a heat radiation suppressing member 31 that is arranged at a distance from the seed crystal T at a side opposite to the side where the bottom wall part 13 is positioned in the growth direction of the single crystal and suppresses heat radiation from the seed crystal T side held by the pedestal part 23 as the holding part.SELECTED DRAWING: Figure 1
Inventors:
TAKAOKA HIROKI
UETA SHUNSAKU
KAJI NAOKI
UETA SHUNSAKU
KAJI NAOKI
Application Number:
JP2018013537A
Publication Date:
August 08, 2019
Filing Date:
January 30, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
C30B29/36; C30B23/06
Attorney, Agent or Firm:
Shuhei Kitano
Katsuya Tanaka
Katsuya Tanaka