Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019133980
Kind Code:
A
Abstract:
To provide a semiconductor device sufficiently improved in carrier mobility.SOLUTION: A SiC semiconductor device including a trench gate structure includes a trench formed in the [0001] direction as a depth direction, on a substrate having a surface of the (0001) plane of hexagonal SiC. The internal wall surface of the trench is approximately the (1-100) plane. A channel of the semiconductor device is formed in a part of the internal wall surface. When the internal wall surface is observed along the [11-20] direction or the internal wall surface is observed along the [0001] direction, the internal wall surface includes a structure where a terrace surface having a plane direction of the (1-100) plane and a step surface constituting a step between the terrace surfaces adjacent to each other appear alternately.SELECTED DRAWING: Figure 1
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Inventors:
SOEJIMA SHIGEMASA
WATANABE YUKIHIKO
YAMASHITA YUSUKE
URAGAMI YASUSHI
SUZUKI KATSUMI
WATANABE YUKIHIKO
YAMASHITA YUSUKE
URAGAMI YASUSHI
SUZUKI KATSUMI
Application Number:
JP2018012503A
Publication Date:
August 08, 2019
Filing Date:
January 29, 2018
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
DENSO CORP
TOYOTA MOTOR CORP
DENSO CORP
TOYOTA MOTOR CORP
International Classes:
H01L29/78; H01L29/04; H01L29/12
Attorney, Agent or Firm:
Kaiyu International Patent Office