Title:
SYSTEM AND METHOD FOR PERFORMING WET ETCHING PROCESS
Document Type and Number:
Japanese Patent JP2019153803
Kind Code:
A
Abstract:
To provide a simple, cost effective method to wet etch a remaining substrate to a desired thickness and surface uniformity.SOLUTION: A process control system includes a plurality of processing stations accessible by a transfer device, and includes: a measuring station to optically measure the thickness of a substrate; and a controller to calculate etch recipes of the substrate in real time and cause a single wafer wet etching station to etch the substrate according to the recipes. In a method, a thickness after etching is measured, and etching recipes are calculated as a function of final measurement results of a previous substrate in real time. In addition, the process control system includes an in-situ end point detection device for detecting a TSV exposure position during a TSV substrate is etched. Etching recipe parameters are adjusted in real time according to feedback concerning previously etched wafers, and a TSV exposure height and etch duration are precisely controlled using end point detection.SELECTED DRAWING: Figure 8
Inventors:
LAURA MAUER
ELENA LAWRENCE
JOHN TADDEI
RAMEY YOUSSEF
ELENA LAWRENCE
JOHN TADDEI
RAMEY YOUSSEF
Application Number:
JP2019085304A
Publication Date:
September 12, 2019
Filing Date:
April 26, 2019
Export Citation:
Assignee:
VEECO PRECISION SURFACE PROC LLC
International Classes:
H01L21/306; H01L21/304
Domestic Patent References:
| JP2011071415A | 2011-04-07 | |||
| JP2005531929A | 2005-10-20 | |||
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Foreign References:
| US20090227047A1 | 2009-09-10 |
Attorney, Agent or Firm:
Ryoichi Takaoka
Nao Oda
Akiyo Iwahori
Kaoru Takahashi
Nao Oda
Akiyo Iwahori
Kaoru Takahashi