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Patent Searching and Data


Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019165608
Kind Code:
A
Abstract:
To provide a semiconductor device in which erroneous ignition is suppressed and a normally-off transistor and a normally-on transistor are cascode-connected.SOLUTION: A semiconductor device of an embodiment comprises: a normally-off transistor including a first source, a first drain, and a first gate; a normally-on transistor including a second source electrically connected to the first drain, a second drain, and a second gate; a first capacitor including a first end part and a second end part, the second end part electrically connected to the second gate; a first diode including a first anode electrically connected between the second end part and the second gate and a first cathode; a gate drive circuit electrically connected to the first gate and the first end part; and a switch including a third end part and a fourth end part, the third end part electrically connected to the first end part.SELECTED DRAWING: Figure 1

Inventors:
IKEDA KENTARO
Application Number:
JP2018053571A
Publication Date:
September 26, 2019
Filing Date:
March 20, 2018
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H02M1/08; H03K17/10; H03K17/687
Domestic Patent References:
JP2017168924A2017-09-21
JP2014187479A2014-10-02
Foreign References:
WO2017010554A12017-01-19
US20140300410A12014-10-09
US20170047841A12017-02-16
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama