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Title:
ION IMPLANTATION APPARATUS AND MEASUREMENT APPARATUS
Document Type and Number:
Japanese Patent JP2019169407
Kind Code:
A
Abstract:
To acquire two-dimensional angle information of an ion beam at high speed.SOLUTION: An ion implantation apparatus includes a first angle measuring device 51 that measures angle information in the first direction of an ion beam, a second angle measuring device 52 that measures angle information in the second direction of the ion beam, and a relative movement mechanism that changes the relative positions of the first angle measuring device 51 and the second angle measuring device 52 with respect to the ion beam in a predetermined relative moving direction, and a control device that calculates angle information in a third direction orthogonal to both the beam traveling direction and the relative movement direction on the basis of angle information in the first direction measured by the first angle measuring device 51, and angle information in the second direction measured by the second angle measuring device 52.SELECTED DRAWING: Figure 3

Inventors:
INDA YOSHIAKI
Application Number:
JP2018057573A
Publication Date:
October 03, 2019
Filing Date:
March 26, 2018
Export Citation:
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Assignee:
SUMITOMO HEAVY INDUSTRIES ION TECH CO LTD
International Classes:
H01J37/317; H01L21/265
Domestic Patent References:
JP2008536268A2008-09-04
JP2016004614A2016-01-12
JP2015011770A2015-01-19
JP2010508623A2010-03-18
JP2012516020A2012-07-12
JP2016134486A2016-07-25
Foreign References:
US20050269524A12005-12-08
Attorney, Agent or Firm:
Sakaki Morishita
Tomisho Teruo



 
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