Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2019179870
Kind Code:
A
Abstract:
To provide a semiconductor device having a structure capable of preventing a gate insulation film from being irradiated with X rays while suppressing an increase in the number of photomasks and the number of processes, and a method for manufacturing the same.SOLUTION: A semiconductor device comprises: a gate insulation film 2 provided in a chip region CR on a semiconductor substrate 1; a gate electrode 3 provided on the gate insulation film 2; an interlayer insulation film 4 provided so as to cover the gate electrode 3; a contact plug 5 provided in the interlayer insulation film 4 in the chip region CR; and an X-ray shielding film 101 selectively provided in a region overlapping the gate insulation film 2 in a plan view on the interlayer insulation film 4 and composed of the same material as the contact plug 5.SELECTED DRAWING: Figure 1
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Inventors:
IGARASHI SATORU
Application Number:
JP2018069013A
Publication Date:
October 17, 2019
Filing Date:
March 30, 2018
Export Citation:
Assignee:
ABLIC INC
International Classes:
H01L21/822; H01L21/336; H01L27/04; H01L29/78