SEMICONDUCTOR DEVICE

Japanese Patent JP2019201035

A

To provide a semiconductor device capable of improving its characteristics.SOLUTION: According to an embodiment, a semiconductor device includes first to third regions and first to third electrodes. The first region contains SiC and includes first and second subregions and a third subregion between the first and second subregions. A direction from the first subregion to the first electrode, a direction from the second subregion to the second electrode, and a direction from the third subregion to the third electrode are along a first direction. A second direction from the first electrode to the second electrode intersects the first direction. In the second direction, the third electrode exists between the first and second electrodes. The second region contains AlGaN (0.2≤x2<1). The third region contains AlGaN (x2